SI5475DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

15 ns

Vgs(th) (Max) @ Id :

450mV @ 1mA (Min)

Turn-Off Delay Time :

122 ns

Height :

1.1mm

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

Rise Time :

20ns

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

31mOhm @ 5.5A, 4.5V

Length :

3.05mm

Mounting Type :

Surface Mount

Mount :

Surface Mount

Number of Pins :

8

Drain to Source Resistance :

31mOhm

Min Operating Temperature :

-55°C

Rds On Max :

31 mΩ

Vgs (Max) :

±8V

Power Dissipation-Max :

1.3W Ta

Fall Time (Typ) :

80 ns

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-12V

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

5.5A

Gate to Source Voltage (Vgs) :

8V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2.5W

Published :

2015

Supplier Device Package :

1206-8 ChipFET™

Max Operating Temperature :

150°C

Weight :

84.99187mg

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

12V

Package / Case :

8-SMD, Flat Lead

Width :

1.65mm