SI5475BDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

72 ns

Resistance :

28mOhm

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Rise Time :

15ns

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta 6.3W Tc

Mounting Type :

Surface Mount

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Height :

1.0922mm

Width :

1.7018mm

Power Dissipation :

2.5W

Mount :

Surface Mount

Turn-Off Delay Time :

65 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Current :

6A

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

6A Ta

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

12V

Series :

TrenchFET®

Number of Terminations :

8

Vgs(th) (Max) @ Id :

1V @ 250μA

Voltage :

12V

Terminal Form :

C BEND

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Transistor Element Material :

SILICON

Length :

3.0988mm

Number of Elements :

1

Element Configuration :

Single

Vgs (Max) :

±8V

Published :

2009

Turn On Delay Time :

10 ns

FET Type :

P-Channel

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 6V

Continuous Drain Current (ID) :

7.7A

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

8V

Package / Case :

8-SMD, Flat Lead

Rds On (Max) @ Id, Vgs :

28m Ω @ 5.6A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)