SI5473DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.1mm

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 4.5V

Drain to Source Voltage (Vdss) :

12V

Length :

3.05mm

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

ROHS3 Compliant

Width :

1.65mm

Weight :

84.99187mg

Continuous Drain Current (ID) :

5.9A

Power Dissipation-Max :

1.3W Ta

Rds On Max :

27 mΩ

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Series :

TrenchFET®

Supplier Device Package :

1206-8 ChipFET™

Drain to Source Resistance :

27mOhm

Turn On Delay Time :

25 ns

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

5.9A Ta

Turn-Off Delay Time :

145 ns

Fall Time (Typ) :

90 ns

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

8V

Number of Channels :

1

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

27mOhm @ 5.9A, 4.5V

Package / Case :

8-SMD, Flat Lead

Drain to Source Breakdown Voltage :

-12V

Vgs (Max) :

±8V

Rise Time :

50ns

Resistance :

27mOhm

Max Operating Temperature :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

FET Type :

P-Channel