SI5473DC-T1-E3

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Mfr.Part #
SI5473DC-T1-E3
Manufacturer
Vishay
Package / Case
8-SMD, Flat Lead
Datasheet
Download
Description
MOSFET P-CH 12V 5.9A 1206-8
Stock
42,875
In Stock :
42,875

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 4.5V
Vgs (Max) :
±8V
FET Type :
P-Channel
Mount :
Surface Mount
Length :
3.05mm
Element Configuration :
Single
Drain to Source Resistance :
27mOhm
Weight :
84.99187mg
Current - Continuous Drain (Id) @ 25°C :
5.9A Ta
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Mounting Type :
Surface Mount
Package / Case :
8-SMD, Flat Lead
Height :
1.1mm
Rds On (Max) @ Id, Vgs :
27mOhm @ 5.9A, 4.5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
50 ns
Packaging :
Tape and Reel (TR)
Vgs(th) (Max) @ Id :
1V @ 250μA
Width :
1.65mm
Drain to Source Breakdown Voltage :
-12V
Rds On Max :
27 mΩ
Power Dissipation-Max :
1.3W Ta
Continuous Drain Current (ID) :
5.9A
Number of Pins :
8
Published :
2015
RoHS Status :
ROHS3 Compliant
Supplier Device Package :
1206-8 ChipFET™
Turn On Delay Time :
25 ns
Rise Time :
50ns
Series :
TrenchFET®
Gate to Source Voltage (Vgs) :
8V
Number of Channels :
1
Turn-Off Delay Time :
145 ns
Min Operating Temperature :
-55°C
Drain to Source Voltage (Vdss) :
12V
Max Operating Temperature :
150°C
Datasheets
SI5473DC-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI5473DC-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:8-SMD, Flat Lead, Number of Pins:8, Number of Channels:1, SI5473DC-T1-E3 pinout, SI5473DC-T1-E3 datasheet PDF, SI5473DC-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI5473DC-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI5473DC-T1-E3


P-Channel Tape & Reel (TR) 27mOhm @ 5.9A, 4.5V ±8V 32nC @ 4.5V 12V 8-SMD, Flat Lead

SI5473DC-T1-E3 Overview


In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -12V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -12V.As a result of its turn-off delay time, which is 145 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 27mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 25 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).

SI5473DC-T1-E3 Features


a continuous drain current (ID) of 5.9A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 145 ns
single MOSFETs transistor is 27mOhm
a 12V drain to source voltage (Vdss)


SI5473DC-T1-E3 Applications


There are a lot of Vishay Siliconix
SI5473DC-T1-E3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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