SI5463EDC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Drain to Source Breakdown Voltage :

-20V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Weight :

84.99187mg

Min Operating Temperature :

-55°C

Supplier Device Package :

1206-8 ChipFET™

RoHS Status :

ROHS3 Compliant

Height :

1.1mm

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta

Package / Case :

8-SMD, Flat Lead

Rds On Max :

62 mΩ

Drain to Source Resistance :

62mOhm

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±12V

Power Dissipation-Max :

1.25W Ta

Turn-Off Delay Time :

1.9 μs

Rise Time :

3.2μs

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Rds On (Max) @ Id, Vgs :

62mOhm @ 4A, 4.5V

Published :

2013

Fall Time (Typ) :

3.2 µs

Width :

1.65mm

Gate to Source Voltage (Vgs) :

12V

FET Type :

P-Channel

Number of Channels :

1

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

-51A

Length :

3.05mm

Turn On Delay Time :

1.85 μs

Element Configuration :

Single

Resistance :

62mOhm

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)