SI5463EDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

1.25W

Rds On Max :

62 mΩ

Mount :

Surface Mount

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Supplier Device Package :

1206-8 ChipFET™

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Fall Time (Typ) :

3.2 µs

Rds On (Max) @ Id, Vgs :

62mOhm @ 4A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta

Element Configuration :

Single

Vgs (Max) :

±12V

Drain to Source Voltage (Vdss) :

20V

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Number of Elements :

1

Number of Pins :

8

Continuous Drain Current (ID) :

3.8A

Rise Time :

3.2μs

Operating Temperature :

-55°C~150°C TJ

Weight :

84.99187mg

Max Operating Temperature :

150°C

Number of Channels :

1

Turn-Off Delay Time :

1.9 μs

Gate to Source Voltage (Vgs) :

12V

Package / Case :

8-SMD, Flat Lead

Published :

2007

Drain to Source Resistance :

62mOhm

Power Dissipation-Max :

1.25W Ta

Drain to Source Breakdown Voltage :

-20V

Turn On Delay Time :

1.85 μs