SI5461EDC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Number of Terminations :

8

Drain to Source Breakdown Voltage :

20V

Drain-source On Resistance-Max :

0.045Ohm

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Fall Time (Typ) :

15 µs

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Power Dissipation-Max :

1.3W Ta

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±12V

Rise Time :

4.5μs

Mount :

Surface Mount

Turn-Off Delay Time :

27 μs

Package / Case :

8-SMD, Flat Lead

Turn On Delay Time :

2.5 µs

Published :

2016

Terminal Position :

Dual

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

C BEND

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Number of Pins :

8

Continuous Drain Current (ID) :

4.5A

Power Dissipation :

1.3W

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

45m Ω @ 5A, 4.5V

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

12V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V