SI5461EDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Transistor Element Material :

SILICON

Terminal Form :

C BEND

Drain to Source Breakdown Voltage :

-20V

FET Type :

P-Channel

Lead Free :

Lead Free

Package / Case :

8-SMD, Flat Lead

Length :

3.0988mm

Power Dissipation :

1.3W

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

-6.2A

Rds On (Max) @ Id, Vgs :

45m Ω @ 5A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Height :

1.0922mm

Vgs (Max) :

±12V

Turn-Off Delay Time :

27 μs

RoHS Status :

ROHS3 Compliant

Width :

1.7018mm

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

20V

Rise Time :

4.5μs

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Radiation Hardening :

No

Mounting Type :

Surface Mount

Turn On Delay Time :

2.5 µs

Drain Current-Max (Abs) (ID) :

4.5A

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Pin Count :

8

Published :

2009

Gate to Source Voltage (Vgs) :

12V

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

4.5 μs

JESD-609 Code :

e3

Number of Pins :

8

Power Dissipation-Max :

1.3W Ta

Pbfree Code :

yes

Terminal Position :

Dual

Resistance :

45mOhm