SI5458DU-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-N3

Number of Channels :

1

Turn On Delay Time :

12 ns

Power Dissipation-Max :

3.5W Ta 10.4W Tc

Nominal Vgs :

3 V

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

41m Ω @ 7.1A, 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

11 ns

Resistance :

41mOhm

Published :

2013

Number of Terminations :

3

Element Configuration :

Single

Terminal Finish :

PURE MATTE TIN

Mounting Type :

Surface Mount

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Pin Count :

8

Mount :

Surface Mount

Number of Elements :

1

Turn-Off Delay Time :

11 ns

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerVDFN

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

8

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

6A

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

6A

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Pulsed Drain Current-Max (IDM) :

20A

Gate to Source Voltage (Vgs) :

20V

Rise Time :

13ns

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 15V

Series :

TrenchFET®

Factory Lead Time :

14 Weeks

DS Breakdown Voltage-Min :

30V

Packaging :

Tape and Reel (TR)