SI5456DU-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.1W Ta 31W Tc

Drain to Source Breakdown Voltage :

20V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn On Delay Time :

20 ns

Power Dissipation :

3.1W

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Pin Count :

8

Drain-source On Resistance-Max :

0.01Ohm

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

20 ns

Operating Mode :

ENHANCEMENT MODE

Rise Time :

15ns

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

PURE MATTE TIN

Mounting Type :

Surface Mount

Fall Time (Typ) :

10 ns

Rds On (Max) @ Id, Vgs :

10m Ω @ 9.3A, 10V

Continuous Drain Current (ID) :

12A

Package / Case :

8-PowerVDFN

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Vgs (Max) :

±20V

Case Connection :

DRAIN

JESD-30 Code :

R-XDSO-N3

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Series :

TrenchFET®

Terminal Position :

Dual

Number of Pins :

8

JESD-609 Code :

e3

Mount :

Surface Mount

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 10V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

50A

Published :

2016