SI5449DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

1.3W

Resistance :

85mOhm

Continuous Drain Current (ID) :

3.1A

Rds On (Max) @ Id, Vgs :

85mOhm @ 3.1A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

3.1A Ta

Power Dissipation-Max :

1.3W Ta

Gate to Source Voltage (Vgs) :

12V

Package / Case :

8-SMD, Flat Lead

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Mounting Type :

Surface Mount

Published :

2016

Turn-Off Delay Time :

35 ns

Drain to Source Resistance :

85mOhm

Rds On Max :

85 mΩ

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Element Configuration :

Single

Series :

TrenchFET®

Vgs (Max) :

±12V

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

1206-8 ChipFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

600mV @ 250μA (Min)

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Max Operating Temperature :

150°C