SI5449DC-T1-E3
- Mfr.Part #
- SI5449DC-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 3.1A 1206-8
- Stock
- 45,428
- In Stock :
- 45,428
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 1.1mm
- Weight :
- 84.99187mg
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 4.5V
- Vgs(th) (Max) @ Id :
- 600mV @ 250μA (Min)
- Package / Case :
- 8-SMD, Flat Lead
- Gate to Source Voltage (Vgs) :
- 12V
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 1.65mm
- Series :
- TrenchFET®
- Fall Time (Typ) :
- 14 ns
- Continuous Drain Current (ID) :
- -4.3A
- Vgs (Max) :
- ±12V
- FET Type :
- P-Channel
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.3W
- Published :
- 2015
- Turn On Delay Time :
- 13 ns
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 85mOhm @ 3.1A, 4.5V
- Turn-Off Delay Time :
- 35 ns
- Length :
- 3.05mm
- Element Configuration :
- Single
- Supplier Device Package :
- 1206-8 ChipFET™
- Rise Time :
- 14ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Number of Pins :
- 8
- Number of Channels :
- 1
- Drain to Source Voltage (Vdss) :
- 30V
- Drain to Source Resistance :
- 85mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 1.3W Ta
- Current - Continuous Drain (Id) @ 25°C :
- 3.1A Ta
- Rds On Max :
- 85 mΩ
- Datasheets
- SI5449DC-T1-E3
P-Channel Tape & Reel (TR) 85mOhm @ 3.1A, 4.5V ±12V 11nC @ 4.5V 30V 8-SMD, Flat Lead
SI5449DC-T1-E3 Overview
Its continuous drain current is -4.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 85mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.
SI5449DC-T1-E3 Features
a continuous drain current (ID) of -4.3A
the turn-off delay time is 35 ns
single MOSFETs transistor is 85mOhm
a 30V drain to source voltage (Vdss)
SI5449DC-T1-E3 Applications
There are a lot of Vishay Siliconix
SI5449DC-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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