SI5449DC-T1-E3

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Mfr.Part #
SI5449DC-T1-E3
Manufacturer
Vishay
Package / Case
8-SMD, Flat Lead
Datasheet
Download
Description
MOSFET P-CH 30V 3.1A 1206-8
Stock
45,428
In Stock :
45,428

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
1.1mm
Weight :
84.99187mg
Mounting Type :
Surface Mount
Min Operating Temperature :
-55°C
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 4.5V
Vgs(th) (Max) @ Id :
600mV @ 250μA (Min)
Package / Case :
8-SMD, Flat Lead
Gate to Source Voltage (Vgs) :
12V
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~150°C TJ
Width :
1.65mm
Series :
TrenchFET®
Fall Time (Typ) :
14 ns
Continuous Drain Current (ID) :
-4.3A
Vgs (Max) :
±12V
FET Type :
P-Channel
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Power Dissipation :
1.3W
Published :
2015
Turn On Delay Time :
13 ns
Max Operating Temperature :
150°C
Rds On (Max) @ Id, Vgs :
85mOhm @ 3.1A, 4.5V
Turn-Off Delay Time :
35 ns
Length :
3.05mm
Element Configuration :
Single
Supplier Device Package :
1206-8 ChipFET™
Rise Time :
14ns
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Number of Pins :
8
Number of Channels :
1
Drain to Source Voltage (Vdss) :
30V
Drain to Source Resistance :
85mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
1.3W Ta
Current - Continuous Drain (Id) @ 25°C :
3.1A Ta
Rds On Max :
85 mΩ
Datasheets
SI5449DC-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI5449DC-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-SMD, Flat Lead, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Number of Channels:1, SI5449DC-T1-E3 pinout, SI5449DC-T1-E3 datasheet PDF, SI5449DC-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI5449DC-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI5449DC-T1-E3


P-Channel Tape & Reel (TR) 85mOhm @ 3.1A, 4.5V ±12V 11nC @ 4.5V 30V 8-SMD, Flat Lead

SI5449DC-T1-E3 Overview


Its continuous drain current is -4.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 85mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.

SI5449DC-T1-E3 Features


a continuous drain current (ID) of -4.3A
the turn-off delay time is 35 ns
single MOSFETs transistor is 85mOhm
a 30V drain to source voltage (Vdss)


SI5449DC-T1-E3 Applications


There are a lot of Vishay Siliconix
SI5449DC-T1-E3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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