SI5447DC-T1-GE3

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Mfr.Part #
SI5447DC-T1-GE3
Manufacturer
Vishay
Package / Case
8-SMD, Flat Lead
Datasheet
Download
Description
MOSFET P-CH 20V 3.5A 1206-8
Stock
35,192
In Stock :
35,192

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Package / Case :
8-SMD, Flat Lead
Rds On Max :
76 mΩ
Power Dissipation-Max :
1.3W Ta
Number of Channels :
1
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
-48A
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 4.5V
Rise Time :
17ns
Fall Time (Typ) :
17 ns
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Mount :
Surface Mount
Max Operating Temperature :
150°C
Vgs (Max) :
±8V
Min Operating Temperature :
-55°C
Rds On (Max) @ Id, Vgs :
76mOhm @ 3.5A, 4.5V
Supplier Device Package :
1206-8 ChipFET™
FET Type :
P-Channel
Drain to Source Voltage (Vdss) :
20V
Turn-Off Delay Time :
44 ns
Radiation Hardening :
No
Current - Continuous Drain (Id) @ 25°C :
3.5A Ta
Series :
TrenchFET®
Drain to Source Breakdown Voltage :
-20V
Vgs(th) (Max) @ Id :
450mV @ 250μA (Min)
Drain to Source Resistance :
76mOhm
Height :
1.1mm
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Width :
1.65mm
Weight :
84.99187mg
Turn On Delay Time :
14 ns
Published :
2016
Number of Pins :
8
Gate to Source Voltage (Vgs) :
8V
Length :
3.05mm
Datasheets
SI5447DC-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI5447DC-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SMD, Flat Lead, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:8, SI5447DC-T1-GE3 pinout, SI5447DC-T1-GE3 datasheet PDF, SI5447DC-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI5447DC-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI5447DC-T1-GE3


P-Channel Tape & Reel (TR) 76mOhm @ 3.5A, 4.5V ±8V 10nC @ 4.5V 20V 8-SMD, Flat Lead

SI5447DC-T1-GE3 Overview


This device's continuous drain current (ID) is -48A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 44 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 76mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).

SI5447DC-T1-GE3 Features


a continuous drain current (ID) of -48A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 44 ns
single MOSFETs transistor is 76mOhm
a 20V drain to source voltage (Vdss)


SI5447DC-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI5447DC-T1-GE3 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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