SI5447DC-T1-E3

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Mfr.Part #
SI5447DC-T1-E3
Manufacturer
Vishay
Package / Case
8-SMD, Flat Lead
Datasheet
Download
Description
MOSFET P-CH 20V 3.5A 1206-8
Stock
13,096
In Stock :
13,096

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Drain to Source Breakdown Voltage :
-20V
Rds On Max :
76 mΩ
Number of Pins :
8
Turn On Delay Time :
14 ns
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Rise Time :
17ns
Drain to Source Voltage (Vdss) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Max Operating Temperature :
150°C
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
8V
Drain to Source Resistance :
76mOhm
Package / Case :
8-SMD, Flat Lead
FET Type :
P-Channel
Fall Time (Typ) :
17 ns
Number of Channels :
1
Vgs(th) (Max) @ Id :
450mV @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 4.5V
Height :
1.1mm
Power Dissipation :
1.3W
Length :
3.05mm
Width :
1.65mm
Current - Continuous Drain (Id) @ 25°C :
3.5A Ta
Supplier Device Package :
1206-8 ChipFET™
Turn-Off Delay Time :
44 ns
Rds On (Max) @ Id, Vgs :
76mOhm @ 3.5A, 4.5V
Series :
TrenchFET®
Power Dissipation-Max :
1.3W Ta
Published :
2011
Continuous Drain Current (ID) :
-4.8A
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Min Operating Temperature :
-55°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
84.99187mg
Vgs (Max) :
±8V
Datasheets
SI5447DC-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI5447DC-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Mounting Type:Surface Mount, Package / Case:8-SMD, Flat Lead, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, SI5447DC-T1-E3 pinout, SI5447DC-T1-E3 datasheet PDF, SI5447DC-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI5447DC-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI5447DC-T1-E3


P-Channel Tape & Reel (TR) 76mOhm @ 3.5A, 4.5V ±8V 10nC @ 4.5V 20V 8-SMD, Flat Lead

SI5447DC-T1-E3 Overview


Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -4.8A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 44 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 76mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.

SI5447DC-T1-E3 Features


a continuous drain current (ID) of -4.8A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 44 ns
single MOSFETs transistor is 76mOhm
a 20V drain to source voltage (Vdss)


SI5447DC-T1-E3 Applications


There are a lot of Vishay Siliconix
SI5447DC-T1-E3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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