SI5447DC-T1-E3
- Mfr.Part #
- SI5447DC-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3.5A 1206-8
- Stock
- 13,096
- In Stock :
- 13,096
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- -20V
- Rds On Max :
- 76 mΩ
- Number of Pins :
- 8
- Turn On Delay Time :
- 14 ns
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 17ns
- Drain to Source Voltage (Vdss) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 8V
- Drain to Source Resistance :
- 76mOhm
- Package / Case :
- 8-SMD, Flat Lead
- FET Type :
- P-Channel
- Fall Time (Typ) :
- 17 ns
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 450mV @ 250μA (Min)
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 4.5V
- Height :
- 1.1mm
- Power Dissipation :
- 1.3W
- Length :
- 3.05mm
- Width :
- 1.65mm
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Ta
- Supplier Device Package :
- 1206-8 ChipFET™
- Turn-Off Delay Time :
- 44 ns
- Rds On (Max) @ Id, Vgs :
- 76mOhm @ 3.5A, 4.5V
- Series :
- TrenchFET®
- Power Dissipation-Max :
- 1.3W Ta
- Published :
- 2011
- Continuous Drain Current (ID) :
- -4.8A
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Min Operating Temperature :
- -55°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 84.99187mg
- Vgs (Max) :
- ±8V
- Datasheets
- SI5447DC-T1-E3
P-Channel Tape & Reel (TR) 76mOhm @ 3.5A, 4.5V ±8V 10nC @ 4.5V 20V 8-SMD, Flat Lead
SI5447DC-T1-E3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -4.8A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 44 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 76mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.
SI5447DC-T1-E3 Features
a continuous drain current (ID) of -4.8A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 44 ns
single MOSFETs transistor is 76mOhm
a 20V drain to source voltage (Vdss)
SI5447DC-T1-E3 Applications
There are a lot of Vishay Siliconix
SI5447DC-T1-E3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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