SI5445BDC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

-71A

Rds On (Max) @ Id, Vgs :

33m Ω @ 5.2A, 4.5V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Vgs (Max) :

±8V

Peak Reflow Temperature (Cel) :

260

Rise Time :

22ns

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Package / Case :

8-SMD, Flat Lead

JESD-609 Code :

e3

Turn On Delay Time :

12 ns

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Power Dissipation-Max :

1.3W Ta

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

8V

Pin Count :

8

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

5.2A

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

5.2A Ta

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Terminal Finish :

MATTE TIN

Turn-Off Delay Time :

75 ns

Drain to Source Breakdown Voltage :

-8V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

50 ns

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

C BEND

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Number of Elements :

1

Series :

TrenchFET®

Resistance :

33mOhm

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Published :

2012