SI5445BDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Packaging :

Tape and Reel (TR)

Pin Count :

8

Continuous Drain Current (ID) :

5.2A

Element Configuration :

Single

Terminal Finish :

MATTE TIN

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

FET Type :

P-Channel

Terminal Form :

C BEND

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

-8V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

75 ns

Power Dissipation-Max :

1.3W Ta

Resistance :

33mOhm

Lead Free :

Lead Free

Turn On Delay Time :

12 ns

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

1.3W

Fall Time (Typ) :

22 ns

Length :

3.0988mm

Package / Case :

8-SMD, Flat Lead

Vgs (Max) :

±8V

Gate to Source Voltage (Vgs) :

8V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

33m Ω @ 5.2A, 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Published :

2009

Rise Time :

22ns

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

Width :

1.7018mm

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Number of Elements :

1

Height :

1.0922mm

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

5.2A Ta