SI5443DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±12V

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Resistance :

65mOhm

Pin Count :

8

Power Dissipation :

1.3W

Transistor Element Material :

SILICON

Terminal Form :

C BEND

Power Dissipation-Max :

1.3W Ta

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.6A, 4.5V

Pbfree Code :

yes

Mounting Type :

Surface Mount

Number of Elements :

1

Published :

2013

Factory Lead Time :

21 Weeks

Package / Case :

8-SMD, Flat Lead

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

12V

Terminal Position :

Dual

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

PURE MATTE TIN

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

3.6A

Element Configuration :

Single

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

600mV @ 250μA (Min)

JESD-30 Code :

R-XDSO-C8

Drain to Source Breakdown Voltage :

20V

Number of Terminations :

8

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

JESD-609 Code :

e3