SI5443DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±12V

Power Dissipation :

1.3W

Mounting Type :

Surface Mount

Pin Count :

8

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.6A, 4.5V

Factory Lead Time :

21 Weeks

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Package / Case :

8-SMD, Flat Lead

Fall Time (Typ) :

30 ns

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

50 ns

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

12V

Terminal Position :

Dual

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

600mV @ 250μA (Min)

Number of Elements :

1

Terminal Form :

C BEND

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Drain-source On Resistance-Max :

0.065Ohm

Number of Pins :

8

Continuous Drain Current (ID) :

3.6A

Drain to Source Breakdown Voltage :

20V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Power Dissipation-Max :

1.3W Ta

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Published :

2007

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Rise Time :

30ns

JESD-609 Code :

e3

Transistor Element Material :

SILICON