SI5441DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150°C

Supplier Device Package :

1206-8 ChipFET™

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Power Dissipation-Max :

1.3W Ta

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

Package / Case :

8-SMD, Flat Lead

Turn On Delay Time :

20 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Gate to Source Voltage (Vgs) :

12V

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

3.9A

Drain to Source Resistance :

55mOhm

Rise Time :

35ns

Rds On Max :

55 mΩ

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

3.9A Ta

Published :

2016

Power Dissipation :

1.3W

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

65 ns

Fall Time (Typ) :

45 ns

Drain to Source Breakdown Voltage :

20V

Rds On (Max) @ Id, Vgs :

55mOhm @ 3.9A, 4.5V