SI5441DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

35ns

Number of Elements :

1

Package / Case :

8-SMD, Flat Lead

Drain to Source Voltage (Vdss) :

20V

Qualification Status :

Not Qualified

Pin Count :

8

ECCN Code :

EAR99

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Vgs (Max) :

±12V

Fall Time (Typ) :

35 ns

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.055Ohm

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

65 ns

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Published :

2015

FET Type :

P-Channel

Power Dissipation :

1.3W

Power Dissipation-Max :

1.3W Ta

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

12V

Drain to Source Breakdown Voltage :

-20V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

55m Ω @ 3.9A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

3.9A Ta

Terminal Form :

C BEND

Terminal Finish :

MATTE TIN

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

3.9A