SI5441BDC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Published :

2009

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Package / Case :

8-SMD, Flat Lead

Weight :

84.99187mg

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

REACH SVHC :

Unknown

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Number of Channels :

1

Fall Time (Typ) :

50 ns

ECCN Code :

EAR99

Turn On Delay Time :

15 ns

Gate to Source Voltage (Vgs) :

12V

JESD-609 Code :

e3

Number of Pins :

8

Threshold Voltage :

12V

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max :

1.3W Ta

Transistor Element Material :

SILICON

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±12V

Terminal Form :

C BEND

Drain Current-Max (Abs) (ID) :

4.4A

Number of Terminations :

8

Terminal Position :

Dual

Radiation Hardening :

No

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

4.4A Ta

DS Breakdown Voltage-Min :

20V

Drain to Source Voltage (Vdss) :

20V

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

61A

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

45m Ω @ 4.4A, 4.5V

Series :

TrenchFET®

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

50 ns

Rise Time :

50ns

Drain-source On Resistance-Max :

0.045Ohm