SI5441BDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

15 ns

Fall Time (Typ) :

50 ns

Drain to Source Breakdown Voltage :

-20V

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

C BEND

Element Configuration :

Single

Length :

3.05mm

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel

Width :

1.65mm

Weight :

84.99187mg

Number of Pins :

8

Power Dissipation-Max :

1.3W Ta

Factory Lead Time :

14 Weeks

Published :

2009

ECCN Code :

EAR99

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

4.4A Ta

Rise Time :

50ns

Gate to Source Voltage (Vgs) :

12V

Transistor Element Material :

SILICON

Series :

TrenchFET®

Pin Count :

8

Rds On (Max) @ Id, Vgs :

45m Ω @ 4.4A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Power Dissipation :

1.3W

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Continuous Drain Current (ID) :

4.4A

Pbfree Code :

yes

Height :

1.1mm

Number of Channels :

1

Vgs (Max) :

±12V

Package / Case :

8-SMD, Flat Lead

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Turn-Off Delay Time :

50 ns

Resistance :

45mOhm

Terminal Position :

Dual