SI5440DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

C BEND

Power Dissipation-Max :

2.5W Ta 6.3W Tc

Power Dissipation :

2.5W

Terminal Position :

Dual

Number of Pins :

8

Length :

3.05mm

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

6A

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Rise Time :

12ns

Turn On Delay Time :

20 ns

Transistor Application :

SWITCHING

Width :

1.65mm

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mount :

Surface Mount

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Height :

1.1mm

Drain to Source Breakdown Voltage :

30V

Published :

2013

FET Type :

N-Channel

Fall Time (Typ) :

10 ns

Turn-Off Delay Time :

20 ns

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Weight :

84.99187mg

Pin Count :

8

Vgs (Max) :

±20V

JESD-609 Code :

e3

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

15 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

19m Ω @ 9.1A, 10V

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Series :

TrenchFET®

Package / Case :

8-SMD, Flat Lead

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V