SI5435BDC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Turn On Delay Time :

8 ns

Lead Free :

Lead Free

Radiation Hardening :

No

Number of Elements :

1

Transistor Element Material :

SILICON

Pbfree Code :

yes

ECCN Code :

EAR99

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

Published :

2016

Operating Temperature :

-55°C~150°C TJ

Resistance :

45mOhm

Drain to Source Voltage (Vdss) :

30V

Pin Count :

8

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

45m Ω @ 4.3A, 10V

FET Type :

P-Channel

Power Dissipation :

1.3W

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Number of Pins :

8

Threshold Voltage :

-3V

Package / Case :

8-SMD, Flat Lead

Terminal Form :

C BEND

Fall Time (Typ) :

12 ns

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

12ns

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

-30V

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

4.3A

RoHS Status :

ROHS3 Compliant

REACH SVHC :

Unknown

Continuous Drain Current (ID) :

-5.9A

Power Dissipation-Max :

1.3W Ta

Number of Terminations :

8

Terminal Finish :

MATTE TIN

Turn-Off Delay Time :

32 ns