SI5435BDC-T1-E3
- Mfr.Part #
- SI5435BDC-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 4.3A 1206-8
- Stock
- 1,571
- In Stock :
- 1,571
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Series :
- TrenchFET®
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- FET Type :
- P-Channel
- Package / Case :
- 8-SMD, Flat Lead
- Rise Time :
- 12ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.3W
- Published :
- 2009
- Max Operating Temperature :
- 150°C
- Supplier Device Package :
- 1206-8 ChipFET™
- Height :
- 1.0922mm
- Packaging :
- Tape and Reel (TR)
- Length :
- 3.0988mm
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 1.3W Ta
- Drain to Source Breakdown Voltage :
- 30V
- Rds On Max :
- 45 mΩ
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 45mOhm @ 4.3A, 10V
- Drain to Source Resistance :
- 45mOhm
- Nominal Vgs :
- -1 V
- Element Configuration :
- Single
- Resistance :
- 45mOhm
- Drain to Source Voltage (Vdss) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Turn On Delay Time :
- 8 ns
- Fall Time (Typ) :
- 12 ns
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- -5.9A
- Turn-Off Delay Time :
- 32 ns
- Number of Elements :
- 1
- REACH SVHC :
- Unknown
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A Ta
- Min Operating Temperature :
- -55°C
- Width :
- 1.7018mm
- Datasheets
- SI5435BDC-T1-E3
P-Channel Tape & Reel (TR) 45mOhm @ 4.3A, 10V ±20V 24nC @ 10V 30V 8-SMD, Flat Lead
SI5435BDC-T1-E3 Overview
The drain current is the maximum continuous current the device can conduct, and this device has -5.9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 32 ns.This device has a drain-to-source resistance of 45mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SI5435BDC-T1-E3 Features
a continuous drain current (ID) of -5.9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 32 ns
single MOSFETs transistor is 45mOhm
a 30V drain to source voltage (Vdss)
SI5435BDC-T1-E3 Applications
There are a lot of Vishay Siliconix
SI5435BDC-T1-E3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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