SI5435BDC-T1-E3

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Mfr.Part #
SI5435BDC-T1-E3
Manufacturer
Vishay
Package / Case
8-SMD, Flat Lead
Datasheet
Download
Description
MOSFET P-CH 30V 4.3A 1206-8
Stock
1,571
In Stock :
1,571

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Series :
TrenchFET®
Mounting Type :
Surface Mount
Radiation Hardening :
No
FET Type :
P-Channel
Package / Case :
8-SMD, Flat Lead
Rise Time :
12ns
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Lead Free :
Lead Free
Power Dissipation :
1.3W
Published :
2009
Max Operating Temperature :
150°C
Supplier Device Package :
1206-8 ChipFET™
Height :
1.0922mm
Packaging :
Tape and Reel (TR)
Length :
3.0988mm
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Power Dissipation-Max :
1.3W Ta
Drain to Source Breakdown Voltage :
30V
Rds On Max :
45 mΩ
Number of Pins :
8
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
45mOhm @ 4.3A, 10V
Drain to Source Resistance :
45mOhm
Nominal Vgs :
-1 V
Element Configuration :
Single
Resistance :
45mOhm
Drain to Source Voltage (Vdss) :
30V
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
3V @ 250µA
Turn On Delay Time :
8 ns
Fall Time (Typ) :
12 ns
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
-5.9A
Turn-Off Delay Time :
32 ns
Number of Elements :
1
REACH SVHC :
Unknown
Current - Continuous Drain (Id) @ 25°C :
4.3A Ta
Min Operating Temperature :
-55°C
Width :
1.7018mm
Datasheets
SI5435BDC-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI5435BDC-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-SMD, Flat Lead, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, SI5435BDC-T1-E3 pinout, SI5435BDC-T1-E3 datasheet PDF, SI5435BDC-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI5435BDC-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI5435BDC-T1-E3


P-Channel Tape & Reel (TR) 45mOhm @ 4.3A, 10V ±20V 24nC @ 10V 30V 8-SMD, Flat Lead

SI5435BDC-T1-E3 Overview


The drain current is the maximum continuous current the device can conduct, and this device has -5.9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 32 ns.This device has a drain-to-source resistance of 45mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

SI5435BDC-T1-E3 Features


a continuous drain current (ID) of -5.9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 32 ns
single MOSFETs transistor is 45mOhm
a 30V drain to source voltage (Vdss)


SI5435BDC-T1-E3 Applications


There are a lot of Vishay Siliconix
SI5435BDC-T1-E3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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