SI5433BDC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

ECCN Code :

EAR99

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Form :

C BEND

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2016

Drain-source On Resistance-Max :

0.037Ohm

Mounting Type :

Surface Mount

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain to Source Voltage (Vdss) :

20V

Rise Time :

25ns

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Fall Time (Typ) :

55 ns

Rds On (Max) @ Id, Vgs :

37m Ω @ 4.8A, 4.5V

Package / Case :

8-SMD, Flat Lead

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

4.8A Ta

Number of Pins :

8

Radiation Hardening :

No

Pbfree Code :

yes

Power Dissipation :

1.3W

Turn-Off Delay Time :

80 ns

Gate to Source Voltage (Vgs) :

8V

Turn On Delay Time :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

Series :

TrenchFET®

Continuous Drain Current (ID) :

-5A

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

FET Type :

P-Channel

Number of Terminations :

8

Pin Count :

8

Drain to Source Breakdown Voltage :

-20V

Power Dissipation-Max :

1.3W Ta

Vgs (Max) :

±8V

Terminal Position :

Dual