SI5433BDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Terminal Form :

C BEND

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Element Configuration :

Single

Rise Time :

25ns

Power Dissipation-Max :

1.3W Ta

Continuous Drain Current (ID) :

4.8A

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

25 ns

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Drain to Source Breakdown Voltage :

-20V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Package / Case :

8-SMD, Flat Lead

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

37m Ω @ 4.8A, 4.5V

Turn-Off Delay Time :

80 ns

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Gate to Source Voltage (Vgs) :

8V

Pin Count :

8

Series :

TrenchFET®

FET Type :

P-Channel

Number of Terminations :

8

Power Dissipation :

1.3W

ECCN Code :

EAR99

Published :

2011

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

10 ns

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.037Ohm

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

4.8A Ta