SI5432DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

1.5V

Resistance :

20mOhm

Published :

2015

Power Dissipation-Max :

2.5W Ta 6.3W Tc

Number of Pins :

8

Drain Current-Max (Abs) (ID) :

6A

Factory Lead Time :

15 Weeks

Package / Case :

8-SMD, Flat Lead

Configuration :

SINGLE WITH BUILT-IN DIODE

REACH SVHC :

Unknown

Vgs (Max) :

±12V

Width :

1.65mm

Gate to Source Voltage (Vgs) :

12V

Fall Time (Typ) :

12 ns

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

6A

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Rise Time :

10ns

Terminal Position :

Dual

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Weight :

84.99187mg

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Channels :

1

Number of Terminations :

8

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

20V

Number of Elements :

1

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 10V

Length :

3.05mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Height :

1.1mm

Rds On (Max) @ Id, Vgs :

20m Ω @ 8.3A, 4.5V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Turn-Off Delay Time :

35 ns

Series :

TrenchFET®

JESD-609 Code :

e3

Turn On Delay Time :

15 ns

Terminal Finish :

MATTE TIN

Terminal Form :

C BEND

Power Dissipation :

2.5W