SI5424DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Factory Lead Time :

21 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

40A

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

C BEND

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Rise Time :

38ns

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

24m Ω @ 4.8A, 10V

Turn-Off Delay Time :

26 ns

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

6A

Published :

2013

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.5W Ta 6.25W Tc

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Drain-source On Resistance-Max :

0.024Ohm

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 15V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Fall Time (Typ) :

9 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2.5W

Number of Terminations :

8

Pin Count :

8

Continuous Drain Current (ID) :

6A

Package / Case :

8-SMD, Flat Lead

Transistor Element Material :

SILICON

Element Configuration :

Single

Pbfree Code :

yes

JESD-609 Code :

e3

Terminal Position :

Dual

FET Type :

N-Channel

Vgs (Max) :

±25V

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

25V

Number of Elements :

1

Number of Pins :

8

ECCN Code :

EAR99