SI5419DU-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

3.1W

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-XDSO-N3

Turn On Delay Time :

10 ns

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

20m Ω @ 6.6A, 10V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

-30V

Vgs (Max) :

±20V

Factory Lead Time :

14 Weeks

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

3mm

Series :

TrenchFET®

Published :

2014

Continuous Drain Current (ID) :

9.9A

Terminal Position :

Dual

ECCN Code :

EAR99

Rise Time :

10ns

Element Configuration :

Single

Resistance :

20mOhm

Power Dissipation-Max :

3.1W Ta 31W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 15V

Height :

750μm

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

40A

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Turn-Off Delay Time :

40 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Package / Case :

8-PowerVDFN

Drain to Source Voltage (Vdss) :

30V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Pin Count :

8

Terminal Finish :

MATTE TIN

Case Connection :

DRAIN

Lead Free :

Lead Free

Width :

1.9mm

Terminal Form :

NO LEAD