SI5415AEDU-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Power Dissipation-Max :

3.1W Ta 31W Tc

Lead Free :

Lead Free

Package / Case :

PowerPAK® ChipFET™ Single

Terminal Finish :

Pure Matte Tin (Sn)

Continuous Drain Current (ID) :

25A

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 10V

Element Configuration :

Single

Published :

2017

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 8V

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

-20V

Fall Time (Typ) :

25 ns

Series :

TrenchFET®

Turn-Off Delay Time :

80 ns

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-50°C~150°C TJ

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Channels :

1

Turn On Delay Time :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

45ns

Vgs (Max) :

±8V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

FET Type :

P-Channel

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

9.6m Ω @ 10A, 4.5V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

3.1W