SI4567DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Gull wing

JESD-609 Code :

e3

Terminal Finish :

PURE MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

355pF @ 20V

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

60m Ω @ 4.1A, 10V

Drain Current-Max (Abs) (ID) :

4.1A

FET Type :

N and P-Channel

Number of Pins :

8

Max Power Dissipation :

2.95W

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

16V

FET Feature :

Standard

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Published :

2016

Power - Max :

2.75W 2.95W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Continuous Drain Current (ID) :

4.4A

Base Part Number :

SI4567

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

40V

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.06Ohm

Number of Elements :

2

Pbfree Code :

yes

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

5A 4.4A

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Transistor Application :

SWITCHING

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Pin Count :

8

Mounting Type :

Surface Mount