SI4532DY

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

900mW

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

FET Type :

N and P-Channel

Power Dissipation :

2W

Voltage - Rated DC :

30V

JESD-609 Code :

e3

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 10V

Continuous Drain Current (ID) :

3.9A

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

3 V

Transistor Element Material :

SILICON

Current Rating :

3.9A

Threshold Voltage :

3V

FET Feature :

Standard

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Width :

4mm

Packaging :

Tape and Reel (TR)

Base Part Number :

SI4532D

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

3.9A 3.5A

Mounting Type :

Surface Mount

Resistance :

65mOhm

Vgs(th) (Max) @ Id :

3V @ 250µA

Pbfree Code :

yes

Fall Time (Typ) :

6 ns

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.9A, 10V

Number of Terminations :

8

Terminal Form :

Gull wing

Number of Pins :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Transistor Application :

SWITCHING

Weight :

230.4mg

Lead Free :

Lead Free

Height :

1.5mm

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Turn-Off Delay Time :

18 ns

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Rise Time :

8ns

Turn On Delay Time :

18 ns

Length :

5mm

Published :

2017

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2