SI4505DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

8V

Drain to Source Voltage (Vdss) :

30V 8V

Drain Current-Max (Abs) (ID) :

6A

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

8V

Factory Lead Time :

21 Weeks

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

18m Ω @ 7.8A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

FET Type :

N and P-Channel

Series :

TrenchFET®

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

6A 3.8A

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Published :

2016

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

8

Max Power Dissipation :

1.2W

Pbfree Code :

yes

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.8V @ 250μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Continuous Drain Current (ID) :

3.8A

Number of Terminations :

8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Logic Level Gate

Terminal Position :

Dual

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

260