SI4532ADY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Length :

5mm

Current - Continuous Drain (Id) @ 25°C :

3.7A 3A

Number of Pins :

8

REACH SVHC :

Unknown

Published :

2013

Power - Max :

1.13W 1.2W

FET Feature :

Logic Level Gate

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

15 Weeks

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Min Operating Temperature :

-55°C

Rds On Max :

53 mΩ

Drain to Source Breakdown Voltage :

30V

Width :

4mm

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

8 ns

Base Part Number :

SI4532

Threshold Voltage :

1V

Supplier Device Package :

8-SO

Rise Time :

9ns

Max Power Dissipation :

1.2W

Mount :

Surface Mount

Max Operating Temperature :

150°C

Weight :

186.993455mg

Height :

1.55mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

80mOhm

Number of Channels :

2

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Drain to Source Voltage (Vdss) :

30V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

53mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id :

1V @ 250μA

Fall Time (Typ) :

10 ns

Turn-Off Delay Time :

21 ns

Continuous Drain Current (ID) :

3.7A

FET Type :

N and P-Channel

Gate to Source Voltage (Vgs) :

20V