SI4501BDY-T1-GE3
- Mfr.Part #
- SI4501BDY-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N/P-CH 30V/8V 8SOIC
- Stock
- 50,583
- In Stock :
- 50,583
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Series :
- TrenchFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 805pF @ 15V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rds On (Max) @ Id, Vgs :
- 17mOhm @ 10A, 10V
- Element Configuration :
- Dual
- Drain to Source Resistance :
- 21mOhm
- Max Power Dissipation :
- 4.5W
- Continuous Drain Current (ID) :
- 12A
- Supplier Device Package :
- 8-SOIC
- FET Feature :
- Logic Level Gate
- Power - Max :
- 4.5W 3.1W
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 14 Weeks
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 9 ns
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 2
- Turn On Delay Time :
- 6 ns
- Drain to Source Voltage (Vdss) :
- 30V 8V
- Turn-Off Delay Time :
- 35 ns
- Max Operating Temperature :
- 150°C
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Contact Plating :
- Tin
- Rise Time :
- 12ns
- Published :
- 2016
- Input Capacitance :
- 805pF
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 12A 8A
- Min Operating Temperature :
- -55°C
- Number of Pins :
- 8
- FET Type :
- N and P-Channel, Common Drain
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Weight :
- 540.001716mg
- Number of Elements :
- 2
- Rds On Max :
- 17 mΩ
- Gate to Source Voltage (Vgs) :
- 8V
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- 800mV
- Datasheets
- SI4501BDY-T1-GE3

SI4501BDY-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
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