SI4532CDY-T1-GE3
- Mfr.Part #
- SI4532CDY-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N/P-CH 30V 6A 8-SOIC
- Stock
- 66,544
- In Stock :
- 66,544
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Length :
- 5mm
- Number of Pins :
- 8
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Number of Elements :
- 2
- Turn On Delay Time :
- 5.5 ns
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 30V
- Turn-Off Delay Time :
- 17 ns
- Pin Count :
- 8
- Number of Terminations :
- 8
- Terminal Form :
- Gull wing
- Fall Time (Typ) :
- 7.7 ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 6A 4.3A
- Packaging :
- Tape and Reel (TR)
- Nominal Vgs :
- 1 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 305pF @ 15V
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Published :
- 2013
- Rds On (Max) @ Id, Vgs :
- 47m Ω @ 3.5A, 10V
- Factory Lead Time :
- 14 Weeks
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 13ns
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 10V
- Max Power Dissipation :
- 2.78W
- Number of Channels :
- 2
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N and P-Channel
- FET Feature :
- Standard
- Resistance :
- 89mOhm
- Base Part Number :
- SI4532
- Series :
- TrenchFET®
- Height :
- 1.75mm
- Weight :
- 186.993455mg
- Width :
- 4mm
- Max Junction Temperature (Tj) :
- 150°C
- Drain Current-Max (Abs) (ID) :
- 6A
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Lead Free :
- Lead Free
- REACH SVHC :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- PURE MATTE TIN
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 6A
- Power Dissipation :
- 2.78W
- Threshold Voltage :
- 1V
- Datasheets
- SI4532CDY-T1-GE3

SI4532CDY-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
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