SI4511DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

2W

Number of Pins :

8

Drain-source On Resistance-Max :

0.0145Ohm

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 9.6A, 10V

Vgs(th) (Max) @ Id :

1.8V @ 250μA

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

ECCN Code :

EAR99

REACH SVHC :

Unknown

Continuous Drain Current (ID) :

9.6A

Pin Count :

8

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

JESD-609 Code :

e3

Threshold Voltage :

600mV

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

7.2A 4.6A

Number of Terminations :

8

FET Feature :

Logic Level Gate

Packaging :

Cut Tape (CT)

Published :

2014

Number of Elements :

2

Number of Channels :

2

Min Operating Temperature :

-55°C

Mount :

Surface Mount

FET Type :

N and P-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

PURE MATTE TIN

Base Part Number :

SI4511

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

Max Power Dissipation :

1.1W

Radiation Hardening :

No

Terminal Position :

Dual

Weight :

186.993455mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

12V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL