SI4532DY
- Mfr.Part #
- SI4532DY
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 3
- Stock
- 19,142
- In Stock :
- 19,142
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Transistor Element Material :
- SILICON
- Length :
- 5mm
- Resistance :
- 65mOhm
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2017
- Height :
- 1.5mm
- Mount :
- Surface Mount
- Turn On Delay Time :
- 18 ns
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 3.9A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3.9A 3.5A
- Weight :
- 230.4mg
- Base Part Number :
- SI4532D
- Input Capacitance (Ciss) (Max) @ Vds :
- 235pF @ 10V
- FET Feature :
- Standard
- FET Type :
- N and P-Channel
- Turn-Off Delay Time :
- 18 ns
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 8ns
- Lifecycle Status :
- ACTIVE (Last Updated: 16 hours ago)
- Number of Pins :
- 8
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- 3.9A
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 3V
- Terminal Position :
- Dual
- Factory Lead Time :
- 8 Weeks
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 6 ns
- Power Dissipation :
- 2W
- Width :
- 4mm
- Number of Elements :
- 2
- Voltage - Rated DC :
- 30V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Pbfree Code :
- yes
- Number of Terminations :
- 8
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Max Power Dissipation :
- 2W
- Current Rating :
- 3.9A
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- 3 V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Power - Max :
- 900mW
- Datasheets
- SI4532DY

SI4532DY datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
SI4532DY Description
These double N-channel and P-channel enhanced mode power field effect transistors are produced using on Semiconductor's PRPROPRORT, high cell density, and DMOS technology. This high-density process is specially tailored to minimize on-resistance and provide excellent switching performance. These devices are particularly suitable for low-voltage applications, such as laptop power management and other battery-powered circuits, which require fast switching, low series power loss and anti-transient.
SI4532DY
Features
N-Channel 3.9A, 30V.RDS(ON) = 0.065? @VGS = 10V
RDS(ON) = 0.095? @VGS = 4.5V.
P-Channel -3.5A,-30V.RDS(ON)= 0.085? @VGS = -10V
RDS(ON)= 0.190 ? @VGS = -4.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely
used surface mount package.
Dual (N & P-Channel) MOSFET in surface mount
package.
SI4532DY Applications
laptop power management
other battery-powered circuits
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