SI4500BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Channels :

2

Height :

1.55mm

Turn On Delay Time :

20 ns

Number of Pins :

8

Series :

TrenchFET®

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Reach Compliance Code :

Unknown

Weight :

186.993455mg

Drain Current-Max (Abs) (ID) :

6.6A

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

55 ns

Power Dissipation :

1.3W

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Threshold Voltage :

1.5V

Base Part Number :

SI4500

Continuous Drain Current (ID) :

9.1A

Width :

4mm

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

6.6A 3.8A

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

12V

Drain to Source Voltage (Vdss) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

20m Ω @ 9.1A, 4.5V

Published :

2012

ECCN Code :

EAR99

Number of Elements :

2

FET Feature :

Logic Level Gate

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Rise Time :

35ns

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Packaging :

Cut Tape (CT)

Length :

5mm

Pin Count :

8

Pbfree Code :

yes

Terminal Position :

Dual

FET Type :

N and P-Channel, Common Drain

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Max Power Dissipation :

1.3W

Fall Time (Typ) :

35 ns