SI4500BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

6.6A

Rds On (Max) @ Id, Vgs :

20m Ω @ 9.1A, 4.5V

Length :

5mm

Min Operating Temperature :

-55°C

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Terminal Form :

Gull wing

Rise Time :

35ns

Number of Channels :

2

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Nominal Vgs :

1.5 V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Published :

2013

Resistance :

60mOhm

Current - Continuous Drain (Id) @ 25°C :

6.6A 3.8A

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Power Dissipation :

2.5W

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Number of Elements :

2

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Threshold Voltage :

1.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Terminal Position :

Dual

Base Part Number :

SI4500

Drain to Source Breakdown Voltage :

20V

FET Type :

N and P-Channel, Common Drain

Turn On Delay Time :

20 ns

Turn-Off Delay Time :

55 ns

Weight :

186.993455mg

Max Power Dissipation :

1.3W

Height :

1.55mm

Pin Count :

8

Continuous Drain Current (ID) :

9.1A

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

35 ns

Number of Pins :

8

Pbfree Code :

yes

Series :

TrenchFET®

REACH SVHC :

Unknown

Width :

4mm

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

12V