SI4565ADY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn On Delay Time :

21 ns

Mount :

Surface Mount

Power - Max :

3.1W

Input Capacitance :

625pF

FET Feature :

Standard

Continuous Drain Current (ID) :

4.5A

Base Part Number :

SI4565

Power Dissipation :

2W

Element Configuration :

Dual

Resistance :

39mOhm

Min Operating Temperature :

-55°C

Rds On (Max) @ Id, Vgs :

39mOhm @ 5A, 10V

FET Type :

N and P-Channel

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drain to Source Resistance :

54mOhm

Lead Free :

Lead Free

Rds On Max :

39 mΩ

Series :

TrenchFET®

Published :

2011

Supplier Device Package :

8-SO

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 20V

Gate to Source Voltage (Vgs) :

16V

Turn-Off Delay Time :

44 ns

Current - Continuous Drain (Id) @ 25°C :

6.6A 5.6A

Fall Time (Typ) :

56 ns

Drain to Source Breakdown Voltage :

40V

Rise Time :

90ns

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Max Power Dissipation :

2W

Number of Elements :

2

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V