SI4564DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

15 ns

Terminal Form :

Gull wing

Mount :

Surface Mount

Max Power Dissipation :

3.2W

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

40V

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

8A

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Power - Max :

3.1W 3.2W

ECCN Code :

EAR99

Terminal Position :

Dual

Continuous Drain Current (ID) :

10A

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

40 ns

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Resistance :

21mOhm

Number of Terminations :

8

Power Dissipation :

2W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

2

Radiation Hardening :

No

Nominal Vgs :

800 mV

Weight :

506.605978mg

DS Breakdown Voltage-Min :

40V

Transistor Element Material :

SILICON

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

10A 9.2A

Max Junction Temperature (Tj) :

150°C

Base Part Number :

SI4564

Pbfree Code :

yes

FET Type :

N and P-Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

855pF @ 20V

Factory Lead Time :

14 Weeks

REACH SVHC :

Unknown

Height :

1.75mm

Published :

2010

Operating Mode :

ENHANCEMENT MODE

Rise Time :

40ns

Threshold Voltage :

800mV

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

FET Feature :

Logic Level Gate

Turn On Delay Time :

42 ns

Transistor Application :

SWITCHING

Pin Count :

8

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

17.5m Ω @ 8A, 10V