SI4563DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

2

REACH SVHC :

Unknown

Threshold Voltage :

2V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Base Part Number :

SI4563

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

Published :

2011

Height :

1.55mm

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

ECCN Code :

EAR99

Continuous Drain Current (ID) :

8A

Qualification Status :

Not Qualified

Turn On Delay Time :

33 ns

Turn-Off Delay Time :

80 ns

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

16V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Number of Channels :

2

Rds On (Max) @ Id, Vgs :

16m Ω @ 5A, 10V

DS Breakdown Voltage-Min :

40V

Width :

4mm

Transistor Element Material :

SILICON

Number of Pins :

8

Pin Count :

8

Weight :

186.993455mg

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

Fall Time (Typ) :

69 ns

Length :

5mm

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Power Dissipation :

2W

Input Capacitance (Ciss) (Max) @ Vds :

2390pF @ 20V

FET Feature :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

25mOhm

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

8A

Series :

TrenchFET®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rise Time :

93ns

FET Type :

N and P-Channel

Contact Plating :

Tin

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Power - Max :

3.25W

Power Dissipation :

2W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

2V @ 250μA