SI4542DY
- Mfr.Part #
- SI4542DY
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N/P-CH 30V 6A 8SOIC
- Stock
- 1,173
- In Stock :
- 1,173
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Input Capacitance (Ciss) (Max) @ Vds :
- 830pF @ 15V
- Lifecycle Status :
- ACTIVE (Last Updated: 16 hours ago)
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Length :
- 4.9mm
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Height :
- 1.575mm
- Series :
- PowerTrench®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 47 ns
- Drain to Source Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Power Dissipation :
- 2W
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Max Power Dissipation :
- 1W
- Radiation Hardening :
- No
- FET Type :
- N and P-Channel
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Form :
- Gull wing
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 2
- Fall Time (Typ) :
- 18 ns
- Mount :
- Surface Mount
- Base Part Number :
- SI4542D
- Published :
- 2001
- Width :
- 3.9mm
- Nominal Vgs :
- 1.5 V
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 5V
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 6A, 10V
- Number of Terminations :
- 8
- Rise Time :
- 22ns
- Terminal Finish :
- Tin (Sn)
- FET Feature :
- Standard
- Voltage - Rated DC :
- 30V
- Transistor Application :
- SWITCHING
- Current Rating :
- 7A
- Number of Pins :
- 8
- Weight :
- 230.4mg
- Operating Temperature :
- -55°C~175°C TJ
- Threshold Voltage :
- 1.5V
- Continuous Drain Current (ID) :
- 6A
- Drain Current-Max (Abs) (ID) :
- 6A
- Datasheets
- SI4542DY

SI4542DY datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
SI4542DY Description
The complementary MOSFET devices are manufactured using on Semiconductor's advanced power trench process, which is customized to minimize on-resistance while maintaining low gate charge for excellent switching performance.
SI4542DY Features
Q1: N-Channel
?6A, 30V
?RDS(ON) = 28 m|? @ VGS = 10 V
?RDS(ON) = 35 m|? @ VGS = 4.5 V
Q2: N-Channel
?-6A, -30V
?RDS(ON) = 32 m|? @ VGS = -10 V
?RDS(ON) = 45 m|? @ VGS = -4.5 V
SI4542DY Applications
This product is general usage and suitable for many different applications.
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