SI3586DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Base Part Number :

SI3586

Radiation Hardening :

No

Published :

2013

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

8V

Nominal Vgs :

1.1 V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Threshold Voltage :

1.1V

Max Power Dissipation :

830mW

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6

Power Dissipation :

830mW

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Turn-Off Delay Time :

55 ns

Rds On (Max) @ Id, Vgs :

60m Ω @ 3.4A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

20V

Transistor Application :

SWITCHING

Fall Time (Typ) :

55 ns

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Pbfree Code :

yes

Resistance :

110mOhm

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

Unknown

Rise Time :

55ns

Transistor Element Material :

SILICON

Series :

TrenchFET®

Number of Pins :

6

Current - Continuous Drain (Id) @ 25°C :

2.9A 2.1A

Additional Feature :

FAST SWITCHING

FET Type :

N and P-Channel

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

JESD-609 Code :

e3

Mount :

Surface Mount

Continuous Drain Current (ID) :

2.9A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL