SI3590DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Threshold Voltage :

1.5V

Nominal Vgs :

1.5 V

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2009

Series :

TrenchFET®

Continuous Drain Current (ID) :

2A

Rds On (Max) @ Id, Vgs :

77m Ω @ 3A, 4.5V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

Current - Continuous Drain (Id) @ 25°C :

2.5A 1.7A

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 4.5V

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

6

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

1.5V @ 250µA

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

2

Mounting Type :

Surface Mount

Base Part Number :

SI3590

Power Dissipation :

830mW

Mount :

Surface Mount

Turn On Delay Time :

5 ns

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Pin Count :

6

Weight :

19.986414mg

Drain-source On Resistance-Max :

0.077Ohm

Terminal Form :

Gull wing

Terminal Position :

Dual

FET Type :

N and P-Channel

ECCN Code :

EAR99

Max Power Dissipation :

830mW

Pbfree Code :

yes

JESD-609 Code :

e3

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL