SI3588DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

2.5A 570mA

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

8V

Terminal Finish :

PURE MATTE TIN

Continuous Drain Current (ID) :

2.5A

Published :

2013

REACH SVHC :

Unknown

Base Part Number :

SI3588

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

80m Ω @ 3A, 4.5V

Threshold Voltage :

450mV

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Max Power Dissipation :

830mW

Drain to Source Breakdown Voltage :

20V

Power Dissipation :

830mW

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Type :

N and P-Channel

Transistor Element Material :

SILICON

Number of Elements :

2

Number of Terminations :

6

Terminal Form :

Gull wing

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Power - Max :

830mW 83mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.08Ohm

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

JESD-609 Code :

e3

Pin Count :

6

Nominal Vgs :

450 mV

Mount :

Surface Mount

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)