SI3552DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Matte Tin (Sn)

Number of Channels :

2

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Base Part Number :

SI3552

Drain to Source Breakdown Voltage :

30V

Threshold Voltage :

1V

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 5V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.105Ohm

REACH SVHC :

Unknown

FET Type :

N and P-Channel

Number of Elements :

1

Terminal Position :

Dual

Terminal Form :

Gull wing

Pbfree Code :

yes

Max Power Dissipation :

1.15W

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

Continuous Drain Current (ID) :

2.5A

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

1.15W

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

105m Ω @ 2.5A, 10V

Published :

2013

Number of Pins :

6

Number of Terminations :

6

Pin Count :

6

Transistor Element Material :

SILICON

Nominal Vgs :

1 V

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Weight :

19.986414mg