SI3590DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Factory Lead Time :

14 Weeks

Number of Terminations :

6

Nominal Vgs :

600 mV

Mount :

Surface Mount

Transistor Application :

SWITCHING

Turn On Delay Time :

5 ns

ECCN Code :

EAR99

Number of Elements :

2

Terminal Position :

Dual

Length :

3.05mm

Max Junction Temperature (Tj) :

150°C

Terminal Finish :

Matte Tin (Sn)

FET Type :

N and P-Channel

FET Feature :

Logic Level Gate

Number of Pins :

6

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Width :

1.65mm

Transistor Element Material :

SILICON

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

SI3590

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Rds On (Max) @ Id, Vgs :

77m Ω @ 3A, 4.5V

Height :

1.1mm

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

2.5A 1.7A

Resistance :

170mOhm

Rise Time :

15ns

Series :

TrenchFET®

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Turn-Off Delay Time :

20 ns

Number of Channels :

2

Continuous Drain Current (ID) :

2.5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

REACH SVHC :

Unknown

Power Dissipation :

830mW

Pin Count :

6

Weight :

19.986414mg

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

830mW

Fall Time (Typ) :

15 ns

Gate to Source Voltage (Vgs) :

12V

Published :

2011